Point defect states in Sb-doped germanium
Abstract
Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E37, E30, E22, and E21) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E37 is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 1011 cm−3 Mrad−1 for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E22, E21, and E30 indicate that E22 likely contains two interstitials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 16, 2015
- Source ID
- 10.1063/1.4933384
Entities
People
- Anu Agarwal
- Corentin Monmeyran
- Lionel C. Kimerling
- Neil Patel
Organizations
- Defense Threat Reduction Agency
- Massachusetts Institute of Technology