Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions
Abstract
By the insertion of thin InxGa1−xN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 19, 2015
- Source ID
- 10.1063/1.4934269
Entities
People
- Debdeep Jena
- Huili Grace Xing
- Kasra Pourang
- Patrick Fay
- S. M. Islam
- Wenjun Li
- Xiaodong Yan
Organizations
- Cornell University
- Defense Advanced Research Projects Agency
- University of Notre Dame