Effect of temperature variations and thermal noise on the static and dynamic behavior of straintronics devices

Abstract

A theoretical model quantifying the effect of temperature variations on the magnetic properties and static and dynamic behavior of the straintronics magnetic tunneling junction is presented. Four common magnetostrictive materials (Nickel, Cobalt, Terfenol-D, and Galfenol) are analyzed to determine their temperature sensitivity and to provide a comprehensive database for different applications. The variations of magnetic anisotropies are studied in detail for temperature levels up to the Curie temperature. The energy barrier of the free layer and the critical voltage required for flipping the magnetization vector are inspected as important metrics that dominate the energy requirements and noise immunity when the device is incorporated into large systems. To study the dynamic thermal noise, the effect of the Langevin thermal field on the free layer's magnetization vector is incorporated into the Landau-Lifshitz-Gilbert equation. The switching energy, flipping delay, write, and hold error probabilities are studied, which are important metrics for nonvolatile memories, an important application of the straintronics magnetic tunneling junctions.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 04, 2015
Source ID
10.1063/1.4934566

Entities

People

  • Mahmood Barangi
  • Pinaki Mazumder

Organizations

  • Air Force Office of Scientific Research
  • National Science Foundation
  • University of Michigan

Tags

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.
  • Semiconductor Device Technology