Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors
Abstract
Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al2O3 and HfO2. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO3), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 04, 2015
- Source ID
- 10.1063/1.4934574
Entities
People
- Agham Posadas
- Alexander A Demkov
- John G Ekerdt
- Martin D. Mcdaniel
- Shen Hu
- Thong Q. Ngo
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Office of Naval Research
- University of Texas at Austin