Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

Abstract

Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore, such remote doping helps to surpass the intraband (Drude) absorption, and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared with previously proposed GBL-based THz lasers.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 09, 2015
Source ID
10.1063/1.4934856

Entities

People

  • M. Ryzhii
  • Michael Shur
  • Taiichi Otsuji
  • V. Ryzhii
  • Vladimir Mitin

Organizations

  • Bauman Moscow State Technical University
  • Japan Society for the Promotion of Science
  • Rensselaer Polytechnic Institute
  • Tohoku University
  • United States Air Force
  • United States Army Research Laboratory
  • University at Buffalo
  • University of Aizu

Tags

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Microelectronics - Graphene