Barrier height fluctuations in InGaN polarization dipole diodes
Abstract
We present an analysis of the effects of lateral barrier height fluctuations on the transport properties of an InGaN polarization dipole diode (PDD). Typical diode analysis proceeds by performing a linear fit to the data contained in a Richardson plot in order to extract the zero-bias barrier height (ϕB) and the Richardson constant (A*). The experimental PDD Richardson plot, however, is highly nonlinear and we attribute this to a spatially nonuniform distribution of barrier heights. After modeling the barrier height distribution using a Gaussian, we fit the Richardson data with a modified, second-order function from which we extract the Richardson constant, mean barrier height, and standard deviation simultaneously. We propose that the physical cause of the observed barrier height inhomogeneity in the PDD is statistical nanoscale fluctuations in indium composition.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 26, 2015
- Source ID
- 10.1063/1.4934876
Entities
People
- Donald J. Suntrup Iii
- Geetak Gupta
- Haoran Li
- S. Keller
- Umesh Mishra
Organizations
- Office of Naval Research
- University of California, Santa Barbara