Transferred large area single crystal MoS2 field effect transistors
Abstract
Transfer of epitaxial, two-dimensional (2D) MoS2 on sapphire grown via synthetic approaches is a prerequisite for practical device applications. We report centimeter-scale, single crystal, synthesized MoS2 field effect transistors (FETs) transferred onto SiO2/Si substrates, with a field-effect mobility of 4.5 cm2 V−1 s−1, which is among the highest mobility values reported for the transferred large-area MoS2 transistors. We demonstrate simple and clean transfer of large-area MoS2 films using deionized water, which can effectively avoid chemical contamination. The transfer method reported here allows standard i-line stepper lithography process to realize multiple devices over the entire film area.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 09, 2015
- Source ID
- 10.1063/1.4934941
Entities
People
- Choong Hee Lee
- Edwin W. Lee Ii
- Jinwoo Hwang
- Lu Ma
- Siddharth Rajan
- Sriram Krishnamoorthy
- William D McCulloch
- Yiying Wu
Organizations
- Air Force Office of Scientific Research
- Ohio State University