Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution
Abstract
For a direct-gap semiconductor (e.g., a p-n junction), photon-assisted tunneling is known to exhibit a high nonlinear absorption. In a transistor laser, as discussed here, the coherent photons generated at the quantum well interact with the collector junction field and “assist” electron tunneling from base to collector, thus resulting in the nonlinear modulation of the laser and the realization of optical pulse generation. 1 and 2 GHz optical pulses are demonstrated in the transistor laser using collector voltage control.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 02, 2015
- Source ID
- 10.1063/1.4935121
Entities
People
- C. Y. Wang
- E. W. Iverson
- MengKe Feng
- N. Holonyak Jr.
Organizations
- Air Force Office of Scientific Research
- University of Illinois Urbana–Champaign