Study of Ho-doped Bi2Te3 topological insulator thin films
Abstract
Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μB/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 02, 2015
- Source ID
- 10.1063/1.4935235
Entities
People
- A. A. Baker
- A. J. Kellock
- A. Pushp
- Adriana I. Figueroa
- G. Van Der Laan
- J. S. Harris
- Liam Collins-Mcintyre
- S. E. Harrison
- S. L. Zhang
- Stuart Parkin
- Thorsten Hesjedal
- Y. L. Chen
Organizations
- Defense Advanced Research Projects Agency
- Diamond Light Source
- Engineering and Physical Sciences Research Council
- International Business Machines Corporation (Armonk, NY)
- John Fell Fund, University of Oxford
- Stanford University
- University of Oxford