Mid-infrared metamorphic interband cascade photodetectors on GaAs substrates
Abstract
Antimony-based mid-infrared interband cascade (IC) photodetectors fabricated on (001) GaAs substrates are reported. By using a “buffer-free” interfacial misfit array growth method, an overall good crystalline quality is obtained on the largely lattice-mismatched GaAs substrate. The GaAs-based IC detectors show comparable optical performance, with similar electrical performance at temperatures higher than 140 K, as compared to the reference devices grown on GaSb substrate. The GaAs-based IC detectors demonstrate dark current density of 2.63 × 10−6 A/cm2 at 180 K, which is about twice as compared to that grown on GaSb substrate, with Johnson-limited D* of 1.06 × 1011 Jones at 180 K and 4.0 μm. The results indicate that IC detector design is robust and relatively insensitive to the material quality, and metamorphic IC detector is viable for large-format infrared focal plane array applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 23, 2015
- Source ID
- 10.1063/1.4936650
Entities
People
- Sanjay Krishna
- Zhao-bing Tian
Organizations
- Air Force Office of Scientific Research
- University of New Mexico