High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
Abstract
Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 07, 2015
- Source ID
- 10.1063/1.4936891
Entities
People
- Bo Song
- Debdeep Jena
- Guowang Li
- Huili Grace Xing
- Jai Verma
- Kazuki Nomoto
- Meng Qi
- Mingda Zhu
- Patrick Fay
- Samuel J Bader
- Vladimir Protasenko
- Xiaodong Yan
- Yuning Zhao
- Zongyang Hu
Organizations
- ARPA-E
- Cornell University
- Office of Naval Research
- University of Notre Dame