Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy
Abstract
Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1−xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 09, 2015
- Source ID
- 10.1063/1.4937273
Entities
People
- Honggyu Kim
- Jianmin Zuo
- Manavaimaran Balaji
- Mauro Sardela
- Paul V Braun
- Qiye Zheng
- Runyu Zhang
- Sebastian Lourdudoss
- Yan-ting Sun
Organizations
- Air Force Office of Scientific Research
- Royal Institute of Technology
- United States Department of Energy
- University of Illinois Urbana–Champaign