Highly efficient conductance control in a topological insulator based magnetoelectric transistor
Abstract
The spin-momentum interlocked properties of the topological insulator (TI) surface states are exploited in a transistor-like structure for efficient conductance control in the TI-magnet system. Combined with the electrically induced magnetization rotation as part of the gate function, the proposed structure takes advantage of the magnetically modulated TI electronic band dispersion in addition to the conventional electrostatic barrier. The transport analysis coupled with the magnetic simulation predicts super-steep current-voltage characteristics near the threshold along with the GHz operating frequencies. Potential implementation to a complementary logic is also examined. The predicted characteristics are most suitable for applications requiring low power or those with small signals.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 11, 2015
- Source ID
- 10.1063/1.4937407
Entities
People
- K. W. Kim
- Xi-lai Li
- Xiaodong Li
- Xiaopeng Duan
- Yuriy G. Semenov
Organizations
- Army Research Office
- North Carolina State University
- Semiconductor Research Corporation