GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity
Abstract
The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 21, 2015
- Source ID
- 10.1063/1.4938002
Entities
People
- Daniel Francis
- Daniel J. Twitchen
- Dong Liu
- Firooz Faili
- Huarui Sun
- James W. Pomeroy
- Martin Kuball
Organizations
- Defense Advanced Research Projects Agency
- Royal Commission for the Exhibition of 1851
- University of Bristol