Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
Abstract
The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1×10−26 cm6/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K–80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K·p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. The experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 28, 2015
- Source ID
- 10.1063/1.4939147
Entities
People
- B. V. Olson
- C. H. Grein
- E. A. Kadlec
- E. A. Shaner
- J. F. Klem
- J. K. Kim
- S. D. Hawkins
Organizations
- Missile Defense Agency
- Sandia National Laboratories
- University of Illinois Urbana–Champaign