Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Abstract

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 04, 2016
Source ID
10.1063/1.4939441

Entities

People

  • Bin Peng
  • Brandon M. Howe
  • David Budil
  • Gail J. Brown
  • Haosu Luo
  • Hwaider Lin
  • Jie Jiao
  • John G Jones
  • Li Xie
  • Ming Liu
  • Nian X. Sun
  • Satoru Emori
  • Tianxiang Nan
  • Xinjun Wang
  • Yuan Gao
  • Zhongqiang Hu

Organizations

  • Air Force Research Laboratory
  • National Natural Science Foundation of China
  • Northeastern University
  • Shanghai Institute of Ceramics
  • W. M. Keck Foundation
  • Xi'an Jiaotong University

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Space