High-mobility BaSnO3 grown by oxide molecular beam epitaxy
Abstract
High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2016
- Source ID
- 10.1063/1.4939657
Entities
People
- Honggyu Kim
- Jack Y. Zhang
- Santosh Raghavan
- Susanne Stemmer
- Timo Schumann
- Tyler A. Cain
Organizations
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of California