Direct growth of CdSe semiconductor quantum dots in glass matrix by femtosecond laser beam
Abstract
Controllable, spatially inhomogeneous distributions of CdSe nanocrystals smaller than the exciton Bohr radius are grown in a glass matrix under combined action of sample heating (below the transformation temperature) and focused high-repetition femtosecond (fs) laser beam. Selective quantum dot precipitation is evidenced by position-dependent absorption and Raman spectra. The particle size is estimated as r=2.1±0.3 nm by comparing the measured absorption and Raman spectra with those obtained from the samples grown in glass by traditional heat-treatment procedure. Direct growth of CdSe quantum dots in glass is enabled by nonlinear excitation using a focused fs duration laser beam (as differentiated from other methods), and this opens an avenue for adjustable selective growth patterns.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 08, 2016
- Source ID
- 10.1063/1.4939690
Entities
People
- A. I. Filin
- D. A. Romanov
- G. R. Bell
- R. J. Levis
Organizations
- Temple University
- United States Army Research Laboratory