Electro-mechanical response of top-gated LaAlO3/SrTiO3
Abstract
LaAlO3/SrTiO3 heterostructures are known to exhibit a sharp, hysteretic metal-insulator transition (MIT) with large enhanced capacitance near depletion. To understand the physical origin of this behavior, the electromechanical response of top-gated LaAlO3/SrTiO3 heterostructures is probed using two simultaneous measurement techniques: piezoresponse force microscopy (PFM) and capacitance spectroscopy. The observed hysteretic PFM responses show strong correlation with the capacitance signals, suggesting an interfacial carrier-mediated structural distortion associated with the gate-tuned MIT. In addition, the frequency dependence of the capacitance enhancement in LaAlO3/SrTiO3 is found to be well-matched to local PFM measurements. Our experimental results provide a fuller understanding of the top-gate tuned MIT in oxide heterostructure, which could be helpful for the development of future oxide-based nanoelectronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 14, 2016
- Source ID
- 10.1063/1.4940045
Entities
People
- Chang-Beom Eom
- Chung-wung Bark
- Feng Bi
- Jeremy Levy
- Mengchen Huang
- Patrick Irvin
- Sanghan Lee
- Sangwoo Ryu
Organizations
- Air Force Office of Scientific Research
- Division of Materials Research
- Pittsburgh Quantum Institute
- University of Pittsburgh
- University of Wisconsin–Madison