Near-ultraviolet micro-Raman study of diamond grown on GaN
Abstract
Ultraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the polycrystalline layer. From line scans of a cross-section along the diamond growth direction, the DC component of the diamond layer is found to be highest near the GaN-on-diamond interface and diminish with characteristic length scale of ∼3.5 μm. Transmission electron microscopy (TEM) of the diamond near the interface confirms the presence of DC. Combined micro-Raman and TEM are used to develop an optical method for estimating the DC volume fraction.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 18, 2016
- Source ID
- 10.1063/1.4940200
Entities
People
- A. Savage
- B. L. Hancock
- D. Francis
- Daniel J. Twitchen
- E. L. Piner
- Firooz Faili
- Jonathan Anderson
- M. Holtz
- Masoud H. Nazari
- S. Graham
- Sangheon Oh
Organizations
- Defense Advanced Research Projects Agency
- Georgia Tech
- Texas State University