Method for determining the residual electron- and hole-densities about the neutrality point over the gate-controlled n ↔ p transition in graphene
Abstract
The Hall effect and the diagonal resistance, which indicates a residual resistivity ρxx≈h/4e2, are experimentally examined over the p ↔ n transition about the nominal neutrality point in chemical vapor deposition (CVD) grown graphene. A distribution of neutrality potentials is invoked in conjunction with multi-carrier conduction to model the experimental observations. From the modeling, we extract the effective residual electron- and hole-densities around the nominal neutrality point. The results indicate mixed transport due to co-existing electrons and holes in large area zero-band gap CVD graphene devices, which indicates domain confined ambipolar currents broadly over the gate-induced n ↔ p transition.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 18, 2016
- Source ID
- 10.1063/1.4940363
Entities
People
- Ramesh G. Mani
Organizations
- Army Research Office
- Georgia State University