BaSnO3 as a channel material in perovskite oxide heterostructures
Abstract
BaSnO3 (BSO) is a transparent perovskite oxide with high room-temperature mobility, a property that is highly desirable for a channel material in transistors. However, its low density of states (DOS) makes it challenging to confine a high-density two-dimensional electron gas (2DEG). Using hybrid density functional theory, we calculate the band structure of BSO, its DOS, and its band offsets with candidate barrier materials, such as SrTiO3 (STO), LaInO3, and KTaO3. With the calculated material parameters as input, Schrödinger-Poisson simulations are then performed on BSO heterostructures to quantitatively address the issue of 2DEG confinement. The BSO/STO interface with a conduction-band offset of 1.14 eV limits the 2DEG density confined within BSO to 8×1013 cm−2. Strategies to improve the confinement via band-offset engineering are discussed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 22, 2016
- Source ID
- 10.1063/1.4942366
Entities
People
- Anderson Janotti
- Burak Himmetoglu
- Chris G. Van de Walle
- Karthik Krishnaswamy
- Lars Bjaalie
- Luke Gordon
Organizations
- Defense Advanced Research Projects Agency
- Division of Advanced Cyberinfrastructure
- Division of Materials Research
- Office of Naval Research
- University of California