Reducing flicker noise in chemical vapor deposition graphene field-effect transistors
Abstract
Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10−7–10−8 μm2 Hz−1) and noise amplitude (4 × 10−8–10−7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 15, 2016
- Source ID
- 10.1063/1.4942468
Entities
People
- Adam L. Friedman
- Cory D. Cress
- Heather N. Arnold
- Jeremy T. Robinson
- Kyle A. Luck
- Mark Hersam
- Scott W. Schmucker
- Tobin J. Marks
- Vinod K Sangwan
Organizations
- Defense Threat Reduction Agency
- National Aeronautics and Space Administration
- National Science Foundation
- Northwestern University
- United States Naval Research Laboratory