Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources
Abstract
A simple and unique laser scheme comprised of a finite-size nanopillar array on a silicon-on-insulator grating layer is introduced for realizing an on-chip monolithically integrated light source. A photonic band-edge mode, confined by the grating substrate in the vertical direction, shows a quality factor as high as 4000. We show that the proposed laser cavity allows direct coupling into a waveguide, which is essential for monolithic integration. In addition, III-V semiconductor nanopillars are grown on a silicon-on-insulator grating substrate in order to demonstrate the feasibility of epitaxy on 3D surfaces. These results provide a practical solution for on-chip integration of a monolithic light source.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 22, 2016
- Source ID
- 10.1063/1.4942777
Entities
People
- Alan C Farrell
- Diana L. Huffaker
- Hyunseok Kim
- Pradeep Senanayake
- Wook-Jae Lee
Organizations
- Air Force Office of Scientific Research
- Missile Defense Agency
- National Science Foundation
- University of California, Los Angeles