Dislocation core structures in (0001) InGaN
Abstract
Threading dislocation core structures in c-plane GaN and InxGa1−xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1−xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1−xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1−xN, consistent with predictions from atomistic Monte Carlo simulations.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 09, 2016
- Source ID
- 10.1063/1.4942847
Entities
People
- C. Mcaleese
- Colin Humphreys
- M. A. Moram
- M. J. Kappers
- Matthew Horton
- R. O. Dusane
- S. J. Haigh
- S. L. Rhode
- S.-l. Sahonta
- T. J. Pennycook
Organizations
- British Federation of Women Graduates
- Cambridge Commonwealth Trust
- Defense Threat Reduction Agency
- Engineering and Physical Sciences Research Council
- Imperial College London
- Indian Institute of Technology Bombay
- Royal Society
- Science and Technology Facilities Council
- University of Cambridge
- University of Manchester
- University of Oxford