Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

Abstract

We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 01, 2016
Source ID
10.1063/1.4943681

Entities

People

  • Jeremiah Van Baren
  • Jing Shi
  • Roland K Kawakami
  • Serol Turkyilmaz
  • Walid Amamou
  • Zhisheng Lin

Organizations

  • National Science Foundation
  • Office of Naval Research
  • Ohio State University
  • University of California

Tags

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Spectroscopy.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene