On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
Abstract
By means of combined current-voltage and capacitance-voltage sweep and transient measurements, we present the effects of forward-bias stress and charge trapping mechanisms at oxide traps in Al2O3/GaN metal-oxide-semiconductor capacitors grown in-situ by metalorganic chemical vapor deposition. Two main current-voltage regimes have been identified: a low-field regime characterized by low gate-current and low flat-band voltage instabilities, and a high-field regime triggered for oxide field greater than 3.3 MV/cm and characterized by the onset of parasitic leakage current and positive flat-band shift. In the low-voltage regime, gate current transients convey stress/relaxation kinetics based on a power-law, suggesting that tunneling trapping mechanisms occur at near-interface traps aligned with the GaN conduction-band minimum. In the high-voltage regime, devices experience parasitic conduction mechanisms and enhanced charge-trapping at oxide-traps revealed by very slow recovery transients.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 14, 2016
- Source ID
- 10.1063/1.4944466
Entities
People
- Davide Bisi
- E. Zanoni
- Gaudenzio Meneghesso
- M. Meneghini
- Ramya Yeluri
- Sallie Ann Keller
- Stanley H. Chan
- Umesh K. Mishra
- X. Liu
Organizations
- ARPA-E
- Office of Naval Research
- United States Department of Energy
- University of California
- University of Padua