Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition
Abstract
Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2016
- Source ID
- 10.1063/1.4944502
Entities
People
- April S. Brown
- Jincheng Li
- Kristen Collar
- Maria Losurdo
- Tong-ho Kim
- Wei Kong
- Wenyuan Jiao
Organizations
- Division of Electrical, Communications & Cyber Systems
- Duke University
- National Science Foundation
- Office of Naval Research