High-speed modulator with interleaved junctions in zero-change CMOS photonics
Abstract
A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 28, 2016
- Source ID
- 10.1063/1.4944999
Entities
People
- Dinis Cheian
- Luca Alloatti
- R. J. Ram
Organizations
- Defense Advanced Research Projects Agency
- Massachusetts Institute of Technology