Nanowire LEDs grown directly on flexible metal foil
Abstract
Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured with the underlying metallic grains. Photoluminescence spectra of GaN nanowires grown on metal foils are comparable to GaN nanowires grown on single crystal Si wafers. Similarly, photoluminescence lifetimes do not vary significantly between these samples. Operational AlGaN light emitting diodes are grown directly on flexible Ta foil with an electroluminescence peak emission of ∼350 nm and a turn-on voltage of ∼5 V. These results pave the way for roll-to-roll manufacturing of solid state optoelectronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 04, 2016
- Source ID
- 10.1063/1.4945419
Entities
People
- A. T. M. Golam Sarwar
- Brelon J. May
- Roberto C. Myers
Organizations
- Army Research Office
- National Science Foundation
- Ohio State University