Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate
Abstract
The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 04, 2016
- Source ID
- 10.1063/1.4945598
Entities
People
- A. Lenz
- C. Prohl
- C. S. Schulze
- M. L. Lee
- S. Rybank
- Scott Maddox
- Seth R. Bank
- Stephen D. March
- V. Füllert
- Xinyi Huang
Organizations
- Air Force Office of Scientific Research
- German Research Foundation
- Technische Universität Berlin
- University of Texas at Austin
- Yale University