Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy
Abstract
Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+–Si/n+–GaAs p–n diodes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 18, 2016
- Source ID
- 10.1063/1.4947436
Entities
People
- Brett Beekley
- Jason C. S. Woo
- Mark S. Goorsky
- Paul J. Simmonds
- Yoon Jung Chang
Organizations
- Boise State University
- Defense Advanced Research Projects Agency
- University of California, Los Angeles