AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes

Abstract

We report AlxIn1−xAsySb1−y separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. They exhibit excess noise factor less or equal to that of Si and the low dark currents typical of III-V compound APDs.

Document Details

Document Type
Pub Defense Publication
Publication Date
May 09, 2016
Source ID
10.1063/1.4949335

Entities

People

  • Joe C. Campbell
  • Madison Woodson
  • Min Ren
  • Scott Maddox
  • Seth R. Bank
  • Yaojia Chen

Organizations

  • Army Research Office
  • University of Texas at Austin
  • University of Virginia

Tags

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy