Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors
Abstract
We present rigorous analytical and computational models to study the plasma-waves in a gated-bilayer system present in a double-channel high electron mobility transistor. By analytically deriving the dispersion relations, we have identified the optical and acoustic modes in such systems. We find that the presence of the metal gate selectively modifies the optical plasmons of an ungated-bilayer, while the acoustic plasmons remain largely unchanged. Analysis shows that these modified optical plasmons could be advantageous for resonant and non-resonant plasma-wave devices. The paper further serves to verify our analytical formulae using a full-wave hydrodynamic numerical solver, based on finite difference time domain algorithm. Using the solver, we examine these modes in the gated/ungated bilayers under a plane wave excitation. We observe that, most incident power couples to the optical mode for such an excitation. Nevertheless, acoustic modes can also be excited, if the discontinuity dimensions are optimized accordingly. These observations are also explained using 2D field-plots for the first time, thus providing intuitive understanding of the plasmon excitation in the bilayers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 17, 2016
- Source ID
- 10.1063/1.4950795
Entities
People
- John L. Volakis
- Shubhendu Bhardwaj
- Siddharth Rajan
Organizations
- Office of Naval Research
- Ohio State University