Single gate p-n junctions in graphene-ferroelectric devices
Abstract
Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr0.2Ti0.8O3 substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an “on-demand” p-n junction in graphene controlled by a single, universal backgate.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 16, 2016
- Source ID
- 10.1063/1.4950975
Entities
People
- J. Henry Hinnefeld
- Lane W Martin
- Moonsub Shim
- Nadya Mason
- Ruijuan Xu
- Shishir Pandya
- Steven Rogers
Organizations
- Army Research Office
- Lawrence Berkeley National Laboratory
- National Science Foundation
- University of California
- University of Illinois Urbana–Champaign