Structure and chemistry of passivated SiC/SiO2 interfaces
Abstract
Here, we report on the chemistry and structure of 4H-SiC/SiO2 interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO2 interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 16, 2016
- Source ID
- 10.1063/1.4951677
Entities
People
- Brett Hull
- Daniel J. Lichtenwalner
- J. Houston Dycus
- James M. LeBeau
- John W. Palmour
- Weizong Xu
Organizations
- National Science Foundation
- North Carolina State University
- United States Army Research Laboratory
- Wolfspeed