Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector
Abstract
We report the performance of a 30 period p-GaAs/AlxGa1−xAs heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2–6 μm wavelength range. Implementation of a current blocking barrier increases the specific detectivity (D*) under dark conditions by two orders of magnitude to ∼1.9 × 1011 Jones at 2.7 μm, at 77 K. Furthermore, at zero bias, the resistance-area product (R0A) attains a value of ∼7.2 × 108 Ω cm2, a five orders enhancement due to the current blocking barrier, with the responsivity reduced by only a factor of ∼1.5.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 16, 2016
- Source ID
- 10.1063/1.4952431
Entities
People
- A. G. U. Perera
- Dilip Chauhan
- E. H. Linfield
- L. H. Li
- Larry Chen
Organizations
- Georgia State University
- National Science Foundation
- Seventh Framework Programme
- United States Army Research Laboratory
- University of Leeds