Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates
Abstract
Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 30, 2016
- Source ID
- 10.1063/1.4952600
Entities
People
- Alan Y. Liu
- Arthur C. Gossard
- Evelyn L. Hu
- John E. Bowers
- Kei May Lau
- Qiang Li
- Weng W. Chow
- Yating Wan
Organizations
- Defense Advanced Research Projects Agency
- Harvard University
- Hong Kong University of Science and Technology
- Research Grants Council, University Grants Committee
- Sandia National Laboratories
- United States Department of Energy
- University of California, Santa Barbara