Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN
Abstract
A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near Ec-0.56 eV in limiting the lifetime and diffusion length values in all these materials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 27, 2016
- Source ID
- 10.1063/1.4952734
Entities
People
- A. V. Turutin
- A. Y. Polyakov
- Eugene Yakimov
- I. V. Shemerov
- In-hwan Lee
- N. B. Smirnov
- Stephen Pearton
- С. А. Тарелкин
Organizations
- Defense Threat Reduction Agency
- Jeonbuk National University
- Ministry of Education and Science of the Russian Federation
- National Research Foundation of Korea
- National University of Science and Technology
- Russian Academy of Sciences
- University of Florida