Kinetics of droplet formation and Bi incorporation in GaSbBi alloys
Abstract
Bi incorporation in GaAs and GaSb has exhibited some promising properties allowing for potential new materials operating in the infrared regime. The growth of these materials has proven difficult, often leading to surfaces covered in droplets or nonuniformity in the composition. We propose a new kinetic model to capture the dynamics of incorporation and droplet formation in the growth of these alloys. The model accurately predicts trends found experimentally. Furthermore, the model shows that compositional nonuniformity arises due to a reduction in the incorporation rate of Bi caused by the nucleation of droplets.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 02, 2016
- Source ID
- 10.1063/1.4952988
Entities
People
- C. Ryan Tait
- Joanna M. Millunchick
Organizations
- United States Department of Defense
- University of Michigan