Electrode-stress-induced nanoscale disorder in Si quantum electronic devices
Abstract
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2016
- Source ID
- 10.1063/1.4954054
Entities
People
- C. B. Simmons
- D. E. Savage
- J. A. Tilka
- J. R. Prance
- Jaeheung Park
- K. C. Sampson
- M. A. Eriksson
- M. G. Lagally
- M. V. Holt
- Paul G. Evans
- S. N. Coppersmith
- Y. Ahn
Organizations
- Argonne National Laboratory
- Army Research Office
- Division of Graduate Education
- Division of Materials Research
- Office of Basic Energy Sciences
- University of Wisconsin–Madison