Conduction band edge effective mass of La-doped BaSnO3
Abstract
BaSnO3 has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO3 thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 20, 2016
- Source ID
- 10.1063/1.4954671
Entities
People
- Ka-Ming Law
- S. J. Allen
- Santosh Raghavan
- Susanne Stemmer
- Timo Schumann
Organizations
- National Science Foundation
- Office of Naval Research
- University of California