Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
Abstract
The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 18, 2016
- Source ID
- 10.1063/1.4958732
Entities
People
- H. Almasi
- Min Xu
- T. Newhouse-illige
- Weigang Wang
- Yan Xu
Organizations
- Defense Advanced Research Projects Agency
- Division of Electrical, Communications & Cyber Systems
- Semiconductor Research Corporation
- University of Arizona