Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures
Abstract
We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 11, 2016
- Source ID
- 10.1063/1.4958851
Entities
People
- Ananth Dodabalapur
- Bongjun Kim
- Kelly Liang
- Mark Hersam
- Michael L. Geier
Organizations
- National Science Foundation
- Northwestern University
- Office of Naval Research
- University of Texas at Austin