Flexible germanium nanomembrane metal-semiconductor-metal photodiodes
Abstract
We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8 mA/cm2 at 3 V by a tensile strain of 0.42% while photon responsivity is increased from 0.2 to 0.45 A/W at the wavelength of 1.5 μm. Enhanced responsivity is also observed at longer wavelengths up to 1.64 μm. The uniaxial tensile strain effectively reduces the direct bandgap energy of the Ge NM, leading to a shift of the absorption edge toward a longer wavelength.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 01, 2016
- Source ID
- 10.1063/1.4960460
Entities
People
- Jung-Hun Seo
- Munho Kim
- Weidong Zhou
- Zhenqiang Ma
- Zongfu Yu
Organizations
- Air Force Office of Scientific Research
- University of Texas at Arlington
- University of Wisconsin–Madison