Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology
Abstract
We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 08, 2016
- Source ID
- 10.1063/1.4961053
Entities
People
- Berardi Sensale-Rodriguez
- Hugo O. Condori Quispe
- Huili Grace Xing
- Jimy J. Encomendero-risco
Organizations
- Cornell University
- National Science Foundation
- Office of Naval Research
- University of Notre Dame
- University of Utah