Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
Abstract
AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm2 and a peak-to-valley current ratio of ≈1.15 across different sizes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 22, 2016
- Source ID
- 10.1063/1.4961442
Entities
People
- David F. Storm
- David J. Meyer
- Elliott R. Brown
- Parastou Fakhimi
- Paul R. Berger
- Tyler A Growden
- Weidong Zhang
Organizations
- Office of Naval Research
- Ohio State University
- United States Naval Research Laboratory
- Wright State University