I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs
Abstract
Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 26, 2016
- Source ID
- 10.1063/1.4963156
Entities
People
- Andrew C. Lang
- David J. Meyer
- David J. Miller
- J. G. Wen
- J. L. Hart
- Mitra L. Taheri
Organizations
- Argonne National Laboratory
- Drexel University
- Office of Naval Research
- United States Naval Research Laboratory