Improving the radiation hardness of graphene field effect transistors
Abstract
Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. Here, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. We believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 10, 2016
- Source ID
- 10.1063/1.4963782
Entities
People
- Amrita Masurkar
- Hassan Edrees
- Ioannis Kymissis
- James C. Hone
- James F. Wishart
- Konstantinos Alexandrou
- Nicholas Petrone
- Yufeng Hao
Organizations
- Brookhaven National Laboratory
- Columbia University
- Defense Threat Reduction Agency
- National Science Foundation
- United States Department of Energy