An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
Abstract
This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process. Temperature-dependent characteristics of laser-output versus pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm2 and 2476 nm, respectively. Lasing characteristic temperature (T0) was extracted as 65 K.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 24, 2016
- Source ID
- 10.1063/1.4966141
Entities
People
- Aboozar Mosleh
- Baohua Li
- Bria Collier
- Greg Sun
- Hameed A. Naseem
- Jifeng Liu
- Joe Margetis
- John Tolle
- Mansour Mortazavi
- Randy Quinde
- Richard Soref
- Sattar Al-Kabi
- Seyed Amir Ghetmiri
- Shui-Qing Yu
- Thach Pham
- Wei Dou
- Wei Du
- Yiyin Zhou
Organizations
- Air Force Office of Scientific Research
- Dartmouth College
- National Science Foundation
- University of Arkansas
- University of Arkansas at Pine Bluff
- University of Massachusetts Boston
- University of Minnesota